CSD16409 Series
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 12.4 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 12.4 mOhm
| Part | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) [Max] | Vgs (Max) [Min] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | FET Type | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Package / Case | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD16409Q3 | 8.2 mOhm | 25 V | 16 V | -12 V | MOSFET (Metal Oxide) | 4.5 V, 10 V | 150 °C | -55 °C | Surface Mount | N-Channel | 2.3 V | 5.6 nC | 15 A, 60 A | 800 pF | 8-VSONP (5x6) | 8-PowerTDFN | 2.6 W |
Key Features
• Ultra Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3mm x 3.3mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck Converter for Applicationsin Networking, Telecom and Computing SystemsOptimized for Control FET ApplicationsNexFET is a trademark of Texas Instruments.Ultra Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3mm x 3.3mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck Converter for Applicationsin Networking, Telecom and Computing SystemsOptimized for Control FET ApplicationsNexFET is a trademark of Texas Instruments.
Description
AI
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.