TPS28226 Series

4-A, 27-V half bridge gate driver with 8-V UVLO for synchronous rectification

Catalog(3 parts)

Part	Driven Configuration	Mounting Type	Input Type	Package / Case▲▼	Package / Case	Supplier Device Package	Voltage - Supply▲▼	Voltage - Supply▲▼	High Side Voltage - Max (Bootstrap)▲▼	Rise / Fall Time (Typ)▲▼	Rise / Fall Time (Typ)▲▼	Number of Drivers▲▼	Channel Type	Operating Temperature▲▼	Operating Temperature▲▼	Gate Type
Texas Instruments TPS28226DR Half-Bridge Gate Driver IC Non-Inverting 8-SOIC	Half-Bridge	Surface Mount	Non-Inverting	0.003899999894201755 m	8-SOIC	8-SOIC	8.800000190734863 V	6.800000190734863 V	33 V	9.99999993922529e-9 s	9.99999993922529e-9 s	2 ul	Synchronous	125 °C	-40 °C	N-Channel MOSFET
Texas Instruments TPS28226DRBT Half-Bridge Gate Driver IC Non-Inverting 8-SON (3x3)	Half-Bridge	Surface Mount	Non-Inverting		8-VDFN Exposed Pad	8-SON (3x3)	8.800000190734863 V	6.800000190734863 V	33 V	9.99999993922529e-9 s	9.99999993922529e-9 s	2 ul	Synchronous	125 °C	-40 °C	N-Channel MOSFET
Texas Instruments TPS28226D Half-Bridge Gate Driver IC Non-Inverting 8-SOIC	Half-Bridge	Surface Mount	Non-Inverting	0.003899999894201755 m	8-SOIC	8-SOIC	8.800000190734863 V	6.800000190734863 V	33 V	9.99999993922529e-9 s	9.99999993922529e-9 s	2 ul	Synchronous	125 °C	-40 °C	N-Channel MOSFET

Key Features

• Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead TimeWide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 VWide Power System Train Input Voltage: 3 V Up to 27 VWide Input PWM Signals: 2.0 V up to 13.2-V AmplitudeCapable to Drive MOSFETs with ≥40-A Current per PhaseHigh Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW– 2 MHzCapable to Propagate <30-ns Input PWM PulsesLow-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current3-State PWM Input for Power Stage ShutdownSpace Saving Enable (Input) and Power Good (Output) Signals on Same PinThermal ShutdownUVLO ProtectionInternal Bootstrap DiodeEconomical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 PackagesHigh Performance Replacement for Popular 3-State Input DriversDrives Two N-Channel MOSFETs with 14-ns Adaptive Dead TimeWide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 VWide Power System Train Input Voltage: 3 V Up to 27 VWide Input PWM Signals: 2.0 V up to 13.2-V AmplitudeCapable to Drive MOSFETs with ≥40-A Current per PhaseHigh Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW– 2 MHzCapable to Propagate <30-ns Input PWM PulsesLow-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current3-State PWM Input for Power Stage ShutdownSpace Saving Enable (Input) and Power Good (Output) Signals on Same PinThermal ShutdownUVLO ProtectionInternal Bootstrap DiodeEconomical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 PackagesHigh Performance Replacement for Popular 3-State Input Drivers

Description

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions. The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration. The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions. The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.