Catalog(7 parts)
Part | Number of Circuits▲▼ | Current - Output High, Low▲▼ | Current - Output High, Low▲▼ | Input Logic Level - High▲▼ | Input Logic Level - High▲▼ | Number of Inputs▲▼ | Voltage - Supply▲▼ | Voltage - Supply▲▼ | Logic Type | Operating Temperature▲▼ | Operating Temperature▲▼ | Mounting Type | Package / Case▲▼ | Package / Case▲▼ | Package / Case | Input Logic Level - Low▲▼ | Input Logic Level - Low▲▼ | Supplier Device Package | Package / Case▲▼ | Current - Quiescent (Max)▲▼ | Max Propagation Delay @ V, Max CL▲▼ |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
4 ul | 0.024000000208616257 A | 0.024000000208616257 A | 2.0999999046325684 V | 3.849999904632568 V | 2 ul | 2 V | 6 V | NAND Gate | -40 °C | 85 °C | Surface Mount | 0.003899999894201755 m | 0.003911599982529879 m | 14-SOIC | 0.8999999761581421 V | 1.649999976158142 V | |||||
4 ul | 0.024000000208616257 A | 0.024000000208616257 A | 2.0999999046325684 V | 3.849999904632568 V | 2 ul | 2 V | 6 V | NAND Gate | -40 °C | 85 °C | Surface Mount | 0.0052999998442828655 m | 14-SSOP | 0.8999999761581421 V | 1.649999976158142 V | 14-SSOP | 0.005308600142598152 m | ||||
4 ul | 0.024000000208616257 A | 0.024000000208616257 A | 2.0999999046325684 V | 3.849999904632568 V | 2 ul | 2 V | 6 V | NAND Gate | -40 °C | 85 °C | Through Hole | 0.007619999814778566 m | 0.007619999814778566 m | 14-DIP | 0.8999999761581421 V | 1.649999976158142 V | |||||
4 ul | 0.024000000208616257 A | 0.024000000208616257 A | 1.2000000476837158 V | 3.849999904632568 V | 2 ul | 1.5 V | 5.5 V | NAND Gate | -55 °C | 125 °C | Through Hole | 0.007619999814778566 m | 0.007619999814778566 m | 14-DIP | 0.30000001192092896 V | 1.649999976158142 V | 0.000003999999989900971 A | 7.300000159915497e-9 s | |||
4 ul | 0.024000000208616257 A | 0.024000000208616257 A | 1.2000000476837158 V | 3.849999904632568 V | 2 ul | 1.5 V | 5.5 V | NAND Gate | -55 °C | 125 °C | Surface Mount | 0.003899999894201755 m | 0.003911599982529879 m | 14-SOIC | 0.30000001192092896 V | 1.649999976158142 V | 0.000003999999989900971 A | 7.300000159915497e-9 s | |||
4 ul | 0.024000000208616257 A | 0.024000000208616257 A | 1.2000000476837158 V | 3.849999904632568 V | 2 ul | 1.5 V | 5.5 V | NAND Gate | -55 °C | 125 °C | Surface Mount | 0.003899999894201755 m | 0.003911599982529879 m | 14-SOIC | 0.30000001192092896 V | 1.649999976158142 V | 0.000003999999989900971 A | 7.300000159915497e-9 s | |||
4 ul | 0.024000000208616257 A | 0.024000000208616257 A | 1.2000000476837158 V | 3.849999904632568 V | 2 ul | 1.5 V | 5.5 V | NAND Gate | -55 °C | 125 °C | Through Hole | 0.007619999814778566 m | 0.007619999814778566 m | 14-DIP | 0.30000001192092896 V | 1.649999976158142 V | 0.000003999999989900971 A | 7.300000159915497e-9 s |
Key Features
• AC types feature 1.5V to 5.5V operation and balanced noise immunity at 30% of the supply voltageSpeed of bipolar F, AS, and S, with significantly reduced power consumptionBalanced propagation delays±24mA output drive current– Fanout to 15 F devicesSCR-latchup-resistant CMOS process and circuit designExceeds 2kV ESD protection per MIL-STD-883, method 3015AC types feature 1.5V to 5.5V operation and balanced noise immunity at 30% of the supply voltageSpeed of bipolar F, AS, and S, with significantly reduced power consumptionBalanced propagation delays±24mA output drive current– Fanout to 15 F devicesSCR-latchup-resistant CMOS process and circuit designExceeds 2kV ESD protection per MIL-STD-883, method 3015
Description
AI
The ‘AC00 devices contain four independent 2-input NAND gates. Each gate performs the Boolean function of Y = A • B or Y = A + B in positive logic.
The ‘AC00 devices contain four independent 2-input NAND gates. Each gate performs the Boolean function of Y = A • B or Y = A + B in positive logic.