UCC27200 Series
3-A, 120-V half bridge gate driver with 8-V UVLO and CMOS inputs
Manufacturer: Texas Instruments
Catalog(11 parts)
Part | Mounting Type | Number of Drivers▲▼ | Supplier Device Package | Logic Voltage - VIL, VIH▲▼ | Logic Voltage - VIL, VIH▲▼ | Voltage - Supply▲▼ | Voltage - Supply▲▼ | Operating Temperature▲▼ | Operating Temperature▲▼ | Package / Case▲▼ | Package / Case | High Side Voltage - Max (Bootstrap)▲▼ | Current - Peak Output (Source, Sink)▲▼ | Current - Peak Output (Source, Sink)▲▼ | Input Type | Rise / Fall Time (Typ)▲▼ | Rise / Fall Time (Typ)▲▼ | Gate Type | Channel Type | Driven Configuration | Grade | Package / Case▲▼ | Package / Case▲▼ | Qualification |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Surface Mount | 2 ul | 8-SOIC | 8 V | 3 V | 8 V | 17 V | -40 °C | 140 °C | 0.003899999894201755 m | 8-SOIC | 120 V | 3 A | 3 A | Non-Inverting | 7.999999773744548e-9 s | 7.000000135093387e-9 s | N-Channel MOSFET | Independent | Half-Bridge | |||||
Surface Mount | 2 ul | 8-SO PowerPad | 8 V | 3 V | 8 V | 17 V | -40 °C | 140 °C | 8-PowerSOIC | 120 V | 3 A | 3 A | Non-Inverting | 7.999999773744548e-9 s | 7.000000135093387e-9 s | N-Channel MOSFET | Independent | Half-Bridge | Automotive | 0.003899999894201755 m | 0.003911599982529879 m | AEC-Q100 | ||
Surface Mount | 2 ul | 8-SOIC | 8 V | 3 V | 8 V | 17 V | -40 °C | 140 °C | 0.003899999894201755 m | 8-SOIC | 120 V | 3 A | 3 A | Non-Inverting | 7.999999773744548e-9 s | 7.000000135093387e-9 s | N-Channel MOSFET | Independent | Half-Bridge | |||||
Surface Mount | 2 ul | 8-SO PowerPad | 8 V | 3 V | 8 V | 17 V | -40 °C | 140 °C | 8-PowerSOIC | 120 V | 3 A | 3 A | Non-Inverting | 7.999999773744548e-9 s | 7.000000135093387e-9 s | N-Channel MOSFET | Independent | Half-Bridge | 0.003899999894201755 m | 0.003911599982529879 m | ||||
Surface Mount | 2 ul | 8-SO PowerPad | 8 V | 3 V | 8 V | 17 V | -40 °C | 140 °C | 8-PowerSOIC | 120 V | 3 A | 3 A | Non-Inverting | 7.999999773744548e-9 s | 7.000000135093387e-9 s | N-Channel MOSFET | Independent | Half-Bridge | 0.003899999894201755 m | 0.003911599982529879 m | ||||
Surface Mount | 2 ul | 8-VSON (4x4) | 8 V | 3 V | 8 V | 17 V | -40 °C | 140 °C | 8-VDFN Exposed Pad | 120 V | 3 A | 3 A | Non-Inverting | 7.999999773744548e-9 s | 7.000000135093387e-9 s | N-Channel MOSFET | Independent | Half-Bridge | ||||||
Surface Mount | 2 ul | 8-VSON (4x4) | 8 V | 3 V | 8 V | 17 V | -40 °C | 140 °C | 8-VDFN Exposed Pad | 120 V | 3 A | 3 A | Non-Inverting | 7.999999773744548e-9 s | 7.000000135093387e-9 s | N-Channel MOSFET | Independent | Half-Bridge | ||||||
Surface Mount | 2 ul | 8-SOIC | 8 V | 3 V | 8 V | 17 V | -40 °C | 140 °C | 0.003899999894201755 m | 8-SOIC | 120 V | 3 A | 3 A | Non-Inverting | 7.999999773744548e-9 s | 7.000000135093387e-9 s | N-Channel MOSFET | Independent | Half-Bridge | |||||
Surface Mount | 2 ul | 8-SOIC | 8 V | 3 V | 8 V | 17 V | -40 °C | 140 °C | 0.003899999894201755 m | 8-SOIC | 120 V | 3 A | 3 A | Non-Inverting | 7.999999773744548e-9 s | 7.000000135093387e-9 s | N-Channel MOSFET | Independent | Half-Bridge | |||||
Surface Mount | 2 ul | 8-SO PowerPad | 8 V | 3 V | 8 V | 17 V | -40 °C | 140 °C | 8-PowerSOIC | 120 V | 3 A | 3 A | Non-Inverting | 7.999999773744548e-9 s | 7.000000135093387e-9 s | N-Channel MOSFET | Independent | Half-Bridge | 0.003899999894201755 m | 0.003911599982529879 m | ||||
Surface Mount | 2 ul | 8-SOIC | 8 V | 3 V | 8 V | 17 V | -40 °C | 140 °C | 0.003899999894201755 m | 8-SOIC | 120 V | 3 A | 3 A | Non-Inverting | 7.999999773744548e-9 s | 7.000000135093387e-9 s | N-Channel MOSFET | Independent | Half-Bridge |
Key Features
• Drives two N-channel MOSFETs in high-side and low-side configurationNegative voltage handling on HS (–5V)Maximum boot voltage of 120VMaximum VDD voltage of 20VOn-chip 0.65V VF, 0.65Ω RD bootstrap diode22ns propagation delay times3A sink and 3A source output currents8ns rise and 7ns fall time with 1000pF load1ns delay matchingUndervoltage lockout for high-side and low-side driverSpecified from –40°C to 150°CDrives two N-channel MOSFETs in high-side and low-side configurationNegative voltage handling on HS (–5V)Maximum boot voltage of 120VMaximum VDD voltage of 20VOn-chip 0.65V VF, 0.65Ω RD bootstrap diode22ns propagation delay times3A sink and 3A source output currents8ns rise and 7ns fall time with 1000pF load1ns delay matchingUndervoltage lockout for high-side and low-side driverSpecified from –40°C to 150°C
Description
AI
The UCC2720x family of high-frequency N-channel MOSFET drivers include a 120V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turnon and turnoff of each other.
An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.
Two versions of the UCC2720x are offered. The UCC27200 has high noise immune CMOS input thresholds while the UCC27201 has TTL compatible thresholds.
The UCC2720x family of high-frequency N-channel MOSFET drivers include a 120V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turnon and turnoff of each other.
An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.
Two versions of the UCC2720x are offered. The UCC27200 has high noise immune CMOS input thresholds while the UCC27201 has TTL compatible thresholds.