Beta
⌘K
POWER MOSFET, N CHANNEL, 55 V, 29 A, 0.04 OHM, TO-220AB, THROUGH HOLE
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 175 ░C | 55 V | 29 A | 34 nC | TO-220-3 | 700 pF | MOSFET (Metal Oxide) | 40 mOhm | TO-220AB | N-Channel | 10 V | Through Hole | 68 W | 4 V | 20 V |
Infineon Technologies | -55 °C | 175 ░C | 55 V | 29 A | 34 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 700 pF | MOSFET (Metal Oxide) | 40 mOhm | D2PAK | N-Channel | 10 V | Surface Mount | 3.8 W 68 W | 4 V | 20 V |