IRFZ34NPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 29 A, 0.04 OHM, TO-220AB, THROUGH HOLE

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IRFZ34NPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 29 A, 0.04 OHM, TO-220AB, THROUGH HOLE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFZ34NPBF

Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFZ34 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max)
Infineon Technologies IRFZ34NPBF	-55 °C	175 ░C	55 V	29 A	34 nC	TO-220-3	700 pF	MOSFET (Metal Oxide)	40 mOhm	TO-220AB	N-Channel	10 V	Through Hole	68 W	4 V	20 V
Infineon Technologies IRFZ34NSTRLPBF	-55 °C	175 ░C	55 V	29 A	34 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	700 pF	MOSFET (Metal Oxide)	40 mOhm	D2PAK	N-Channel	10 V	Surface Mount	3.8 W 68 W	4 V	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.44
		10	$ 0.91
		100	$ 0.61
		500	$ 0.47
		1000	$ 0.43
		2000	$ 0.40
		5000	$ 0.36
		10000	$ 0.34

Description

General part information

IRFZ34 Series

The IRFZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.

Documents

Technical documentation and resources