FDG312P Series

P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ

Catalog

P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ

Part	Technology	Package Name	Package / Case	Gate Charge (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Mounting Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)
ON Semiconductor FDG312P	MOSFET (Metal Oxide)	SC-88 (SC-70-6)	6-TSSOP SC-88 SOT-363	5 nC	8 V	330 pF	P-Channel	-55 °C	150 °C	1.5 V	Surface Mount	2.5 V	4.5 V	20 V	750 mW	1.2 A
ON Semiconductor FDG312P	MOSFET (Metal Oxide)	SC-88 (SC-70-6)	6-TSSOP SC-88 SOT-363	5 nC	8 V	330 pF	P-Channel	-55 °C	150 °C	1.5 V	Surface Mount	2.5 V	4.5 V	20 V	750 mW	1.2 A

Catalog

P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ

Key Features

-1.2 A, -20 V

• RDS(on)= 0.18 Ω @ VGS= -4.5 V

• RDS(on)= 0.25 Ω @ VGS= -2.5 V

• Low gate charge (3.3 nC typical).

• High performance trench technology for extremely low RDS(ON).

• Compact industry standard SC70-6 surface mount package.

Description

This P-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.