FDG312P
ActiveP-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED, -1.2 A, 180 MΩ
FDG312P
ActiveP-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED, -1.2 A, 180 MΩ
Description
General part information
FDG312P Series
This P-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDG312P |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.2 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 5 nC |
| Input Capacitance (Ciss) (Max) | 330 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | SC-88 (SC-70-6) |
| Power Dissipation (Max) | 750 mW |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1.5 V |
Pricing
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CAD
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