LM5110 Series

Catalog

IC GATE DRVR LOW-SIDE 8SOIC

Part	Gate Type	Operating Temperature (Max)	Operating Temperature (Min)	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Input Type	Channel Type	Mounting Type	Driven Configuration	Package Name	Package Length	Package Width	Rise Time (Typ)	Fall Time (Typ)	Logic Voltage - VIL	Logic Voltage - VIH	Gate Channel	Package / Case
Texas Instruments LM5110-3MX	MOSFET N-Channel MOSFET	125 °C	-40 °C	2	5 A	3 A	14 V	3.5 V	Inverting Non-Inverting	Independent	Surface Mount	Low-Side	8-SOIC	0.154 in	3.9 mm	14 ns	12 ns	0.8 V	2.2 V	N-Channel
Texas Instruments LM5110-3SD	MOSFET N-Channel MOSFET	125 °C	-40 °C	2	5 A	3 A	14 V	3.5 V	Inverting Non-Inverting	Independent	Surface Mount	Low-Side	10-WSON	4 mm	4 mm	14 ns	12 ns	0.8 V	2.2 V	N-Channel	10-WDFN Exposed Pad
Texas Instruments LM5110-3M/NOPB	MOSFET N-Channel MOSFET	125 °C	-40 °C	2	5 A	3 A	14 V	3.5 V	Inverting Non-Inverting	Independent	Surface Mount	Low-Side	8-SOIC	0.154 in	3.9 mm	14 ns	12 ns	0.8 V	2.2 V	N-Channel
Texas Instruments LM5110-1SD/NOPB	MOSFET N-Channel MOSFET	125 °C	-40 °C	2	5 A	3 A	14 V	3.5 V	Non-Inverting	Independent	Surface Mount	Low-Side	10-WSON	4 mm	4 mm	14 ns	12 ns	0.8 V	2.2 V	N-Channel	10-WDFN Exposed Pad
Texas Instruments LM5110-2M	MOSFET N-Channel MOSFET	125 °C	-40 °C	2	5 A	3 A	14 V	3.5 V	Inverting	Independent	Surface Mount	Low-Side	8-SOIC	0.154 in	3.9 mm	14 ns	12 ns	0.8 V	2.2 V	N-Channel
Texas Instruments LM5110-3M	MOSFET N-Channel MOSFET	125 °C	-40 °C	2	5 A	3 A	14 V	3.5 V	Inverting Non-Inverting	Independent	Surface Mount	Low-Side	8-SOIC	0.154 in	3.9 mm	14 ns	12 ns	0.8 V	2.2 V	N-Channel
Texas Instruments LM5110-1SDX/NOPB	IGBT MOSFET N-Channel MOSFET	125 °C	-40 °C	2	5 A	3 A	14 V	3.5 V	Non-Inverting	Independent	Surface Mount	Low-Side	10-WSON	4 mm	4 mm	14 ns	12 ns	0.8 V	2.2 V	N-Channel	10-WDFN Exposed Pad
Texas Instruments LM5110-1SD	MOSFET N-Channel MOSFET	125 °C	-40 °C	2	5 A	3 A	14 V	3.5 V	Non-Inverting	Independent	Surface Mount	Low-Side	10-WSON	4 mm	4 mm	14 ns	12 ns	0.8 V	2.2 V	N-Channel	10-WDFN Exposed Pad
Texas Instruments LM5110-1M/NOPB	MOSFET	125 °C	-40 °C	2	5 A	3 A	14 V	3.5 V	Non-Inverting	Independent	Surface Mount	Low-Side	8-SOIC	0.154 in	3.9 mm	14 ns	12 ns	0.8 V	2.2 V	N-Channel
Texas Instruments LM5110-1MX	MOSFET N-Channel MOSFET	125 °C	-40 °C	2	5 A	3 A	14 V	3.5 V	Non-Inverting	Independent	Surface Mount	Low-Side	8-SOIC	0.154 in	3.9 mm	14 ns	12 ns	0.8 V	2.2 V	N-Channel