CSD16321Q5 Series
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm
| Part | FET Type | Mounting Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | Technology | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD16321Q5 | N-Channel | Surface Mount | 3.1 W | 3100 pF | 150 °C | -55 °C | 3 V, 8 V | 8-PowerTDFN | -8 V, 10 V | 2.4 mOhm | 25 V | 8-VSON-CLIP (5x6) | MOSFET (Metal Oxide) | 19 nC | 1.4 V | |
Texas Instruments CSD16321Q5T | N-Channel | Surface Mount | 3.1 W, 113 W | 3100 pF | 150 °C | -55 °C | 3 V, 8 V | 8-PowerTDFN | -8 V, 10 V | 2.4 mOhm | 25 V | 8-VSON-CLIP (5x6) | MOSFET (Metal Oxide) | 19 nC | 1.4 V | 29 A, 100 A |
Key Features
• Optimized for 5V gate driveUltra-low Qg and QgdLow-thermal resistanceAvalanche ratedLead-free terminal platingRoHS compliantSON 5mm × 6mm plastic packageOptimized for 5V gate driveUltra-low Qg and QgdLow-thermal resistanceAvalanche ratedLead-free terminal platingRoHS compliantSON 5mm × 6mm plastic package
Description
AI
This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.
This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.