NGTB35N60FL2 Series

IGBT, 600V 35A FS2 Solar/UPS

Catalog

IGBT, 600V 35A FS2 Solar/UPS

Part	Td (on) @ 25°C	Td (off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)	Test Condition Voltage (Secondary)	Test Condition Current	Test Condition Voltage	Test Condition Resistance	Input Type	Switching Energy (Off)	Switching Energy (On)	Reverse Recovery Time (trr)	Mounting Type	IGBT Type	Current - Collector (Ic) (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Power - Max	Package / Case	Vce(on) (Max)	Current - Collector Pulsed (Icm)	Gate Charge
ON Semiconductor NGTB35N60FL2WG	72 ns	132 ns	600 V	15 V	35 A	400 V	10 Ohm	Standard	280 µJ	840 µJ	68 ns	Through Hole	Trench Field Stop	70 A	TO-247-3	-55 °C	175 °C	300 W	TO-247-3	2 V	120 A	125 nC

Catalog

IGBT, 600V 35A FS2 Solar/UPS

Key Features

• Extremely Efficient Trench with Field Stop Technology

• TJmax = 175°C

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• 5µs Short−Circuit Capability

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage