NGTB35N60FL2WG
ObsoleteIGBT TRENCH/FS 600V 70A TO247
NGTB35N60FL2WG
ObsoleteIGBT TRENCH/FS 600V 70A TO247
Description
General part information
NGTB35N60FL2 Series
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage
Technical Specifications
Parameters and characteristics for this part
| Specification | NGTB35N60FL2WG |
|---|---|
| Current - Collector (Ic) (Max) | 70 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 125 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power - Max | 300 W |
| Reverse Recovery Time (trr) | 68 ns |
| Switching Energy (Off) | 280 µJ |
| Switching Energy (On) | 840 µJ |
| Td (off) @ 25°C | 132 ns |
| Td (on) @ 25°C | 72 ns |
| Test Condition Current | 35 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
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CAD
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Documents
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