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74AUP1G00 Series

Single 1-input, 0.8-V to 3.6-V low power NAND gate

Manufacturer: Texas Instruments

Catalog(8 parts)

PartOperating Temperature▲▼Operating Temperature▲▼Supplier Device PackageVoltage - Supply▲▼Voltage - Supply▲▼Mounting TypeCurrent - Output High, Low▲▼Input Logic Level - High▲▼Input Logic Level - High▲▼Package / CaseLogic TypeNumber of Inputs▲▼Current - Quiescent (Max)▲▼Max Propagation Delay @ V, Max CL▲▼Number of Circuits▲▼Supplier Device Package▲▼Supplier Device Package▲▼
Texas Instruments
SN74AUP1G00DCKR
NAND Gate IC 1 Channel SC-70-5
-40 °C
85 °C
SC-70-5
3.5999999046325684 V
0.800000011920929 V
Surface Mount
0.004000000189989805 A, 0.004000000189989805 A
1.600000023841858 V
2 V
5-TSSOP, SC-70-5, SOT-353
NAND Gate
2 ul
4.999999987376214e-7 A
6.5000000937232025e-9 s
1 ul
Texas Instruments
SN74AUP1G00DSF2
NAND Gate IC 1 Channel 6-SON (1x1)
-40 °C
85 °C
6-SON (1x1)
3.5999999046325684 V
0.800000011920929 V
Surface Mount
0.004000000189989805 A, 0.004000000189989805 A
1.600000023841858 V
2 V
6-XFDFN
NAND Gate
2 ul
4.999999987376214e-7 A
6.5000000937232025e-9 s
1 ul
Texas Instruments
SN74AUP1G00DRYR
NAND Gate IC 1 Channel 6-SON (1.45x1)
-40 °C
85 °C
6-SON
3.5999999046325684 V
0.800000011920929 V
Surface Mount
0.004000000189989805 A, 0.004000000189989805 A
1.600000023841858 V
2 V
6-UFDFN
NAND Gate
2 ul
4.999999987376214e-7 A
6.5000000937232025e-9 s
1 ul
1 ul
1.4500000476837158 ul
Texas Instruments
SN74AUP1G00DSFR
NAND Gate IC 1 Channel 6-SON (1x1)
-40 °C
85 °C
6-SON (1x1)
3.5999999046325684 V
0.800000011920929 V
Surface Mount
0.004000000189989805 A, 0.004000000189989805 A
1.600000023841858 V
2 V
6-XFDFN
NAND Gate
2 ul
4.999999987376214e-7 A
6.5000000937232025e-9 s
1 ul
Texas Instruments
SN74AUP1G00DCKRG4
NAND Gate IC 1 Channel SC-70-5
-40 °C
85 °C
SC-70-5
3.5999999046325684 V
0.800000011920929 V
Surface Mount
0.004000000189989805 A, 0.004000000189989805 A
1.600000023841858 V
2 V
5-TSSOP, SC-70-5, SOT-353
NAND Gate
2 ul
4.999999987376214e-7 A
6.5000000937232025e-9 s
1 ul
Texas Instruments
SN74AUP1G00DBVT
NAND Gate IC 1 Channel SOT-23-5
-40 °C
85 °C
SOT-23-5
3.5999999046325684 V
0.800000011920929 V
Surface Mount
0.004000000189989805 A, 0.004000000189989805 A
1.600000023841858 V
2 V
SC-74A, SOT-753
NAND Gate
2 ul
4.999999987376214e-7 A
6.5000000937232025e-9 s
1 ul
Texas Instruments
SN74AUP1G00DPWR
NAND Gate IC 1 Channel 4-X2SON (0.8x0.8)
-40 °C
85 °C
4-X2SON
3.5999999046325684 V
0.800000011920929 V
Surface Mount
0.004000000189989805 A, 0.004000000189989805 A
1.600000023841858 V
2 V
4-XFDFN Exposed Pad
NAND Gate
2 ul
4.999999987376214e-7 A
6.5000000937232025e-9 s
1 ul
0.800000011920929 ul
0.800000011920929 ul
Texas Instruments
SN74AUP1G00YFPR
NAND Gate IC 1 Channel 6-DSBGA
-40 °C
85 °C
6-DSBGA
3.5999999046325684 V
0.800000011920929 V
Surface Mount
0.004000000189989805 A, 0.004000000189989805 A
1.600000023841858 V
2 V
6-XFBGA, DSBGA
NAND Gate
2 ul
4.999999987376214e-7 A
6.5000000937232025e-9 s
1 ul

Key Features

• ESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Available in the Ultra Small 0.64 mm2Package (DPW) with 0.5-mm PitchLow Static-Power Consumption (ICC= 0.9 µA Max)Low Dynamic-Power Consumption (Cpd= 4 pF Typical at 3.3 V)Low Input Capacitance (Ci= 1.5 pF Typical)Low Noise Overshoot and Undershoot <10% of VCCIoffSupports Live Insertion, Partial-Power-Down Mode, and Back-Drive ProtectionInput Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at Input (Vhys= 250 mV Typical at 3.3 V)Wide Operating VCCRange of 0.8 V to 3.6 VOptimized for 3.3-V Operation3.6-V I/O Tolerant to Support Mixed-Mode Signal Operationtpd= 4.8 ns Maximum at 3.3 VSuitable for Point-to-Point ApplicationsLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Available in the Ultra Small 0.64 mm2Package (DPW) with 0.5-mm PitchLow Static-Power Consumption (ICC= 0.9 µA Max)Low Dynamic-Power Consumption (Cpd= 4 pF Typical at 3.3 V)Low Input Capacitance (Ci= 1.5 pF Typical)Low Noise Overshoot and Undershoot <10% of VCCIoffSupports Live Insertion, Partial-Power-Down Mode, and Back-Drive ProtectionInput Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at Input (Vhys= 250 mV Typical at 3.3 V)Wide Operating VCCRange of 0.8 V to 3.6 VOptimized for 3.3-V Operation3.6-V I/O Tolerant to Support Mixed-Mode Signal Operationtpd= 4.8 ns Maximum at 3.3 VSuitable for Point-to-Point ApplicationsLatch-Up Performance Exceeds 100 mA Per JESD 78, Class II

Description

AI
This single 2-input positive-NAND gate performs the Boolean function Y =A × Bor Y =A+Bin positive logic. This single 2-input positive-NAND gate performs the Boolean function Y =A × Bor Y =A+Bin positive logic.