CSD25501F3 Series

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Part	Package / Case	Technology	Package Name	Package Length	Package Width	FET Type	Vgs (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Gate Charge (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Texas Instruments CSD25501F3T	3-XFLGA	MOSFET (Metal Oxide)	3-LGA	0.73 mm	0.64 mm	P-Channel	-20 V	1.05 V	385 pF	Surface Mount	1.33 nC	500 mW	-55 °C	150 °C	0.076 Ohm	3.6 A	20 V	4.5 V	1.8 V
Texas Instruments CSD25501F3	3-XFLGA	MOSFET (Metal Oxide)	3-LGA	0.73 mm	0.64 mm	P-Channel	-20 V	1.05 V	385 pF	Surface Mount	1.33 nC	500 mW	-55 °C	150 °C	0.076 Ohm	3.6 A	20 V	4.5 V	1.8 V

Catalog

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection

Description

This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6V. This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6V.