Beta
⌘K
SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 10 A, 16 NC, TO-220
| Part | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Package / Case | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Technology | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 290 pF | 0 ns | TO-220-2 | No Recovery Time | 175 ░C | -55 C | 90 µA | SiC (Silicon Carbide) Schottky | 2.1 V | PG-TO220-2-1 | 600 V | Through Hole | 10 A |