Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; IPAK TO-251 PACKAGE; 39 MOHM;
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Package / Case | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Vgs (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 100 V | IPAK (TO-251AA) | 1690 pF | Through Hole | 39 mOhm | 10 V | 56 nC | 4 V | IPAK TO-251-3 Short Leads TO-251AA | N-Channel | -55 °C | 175 ░C | 31 A | 3 W 110 W | 20 V | MOSFET (Metal Oxide) |