IRFU3410PBF
IR MOSFET™ N-CHANNEL POWER MOSFET ; IPAK TO-251 PACKAGE; 39 MOHM;
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IRFU3410PBF
IR MOSFET™ N-CHANNEL POWER MOSFET ; IPAK TO-251 PACKAGE; 39 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRFU3410PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 110 W, 3 W |
| Rds On (Max) @ Id, Vgs | 39 mOhm |
| Supplier Device Package | IPAK (TO-251AA) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.64 | |
| 10 | $ 1.04 | |||
| 100 | $ 0.70 | |||
| 500 | $ 0.55 | |||
| 1000 | $ 0.50 | |||
| 2000 | $ 0.46 | |||
| 5000 | $ 0.42 | |||
| 10000 | $ 0.41 | |||
Description
General part information
IRFU3410 Series
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.