CSD18511 Series

40-V, N channel NexFET™ power MOSFET, single D2PAK, 2.6 mOhm

Catalog

40-V, N channel NexFET™ power MOSFET, single D2PAK, 2.6 mOhm

Part	Current - Continuous Drain (Id) (Ta)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Vgs(th) (Max)	Mounting Type	Gate Charge (Max)	Vgs (Max)	Power Dissipation (Max)	Package Name	Input Capacitance (Ciss) (Max)	Technology	Drain to Source Voltage (Vdss)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Package Width	Package Length
Texas Instruments CSD18511KTT	194 A	N-Channel	10 V	4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.4 V	Surface Mount	64 nC	20 V	188 W	TO-263 (DDPAK-3)	5940 pF	MOSFET (Metal Oxide)	40 V	2.6 mOhm	-55 °C	175 °C
Texas Instruments CSD18511Q5AT		N-Channel	10 V	4.5 V	8-PowerTDFN	2.45 V	Surface Mount	63 nC	20 V	104 W	8-VSONP	5850 pF	MOSFET (Metal Oxide)	40 V	3.5 mOhm	-55 °C	150 °C	159 A	6 mm	5 mm
Texas Instruments CSD18511KCS	194 A	N-Channel	10 V	4.5 V	TO-220-3	2.4 V	Through Hole	64 nC	20 V	188 W	TO-220-3	5940 pF	MOSFET (Metal Oxide)	40 V	2.6 mOhm	-55 °C	175 °C
Texas Instruments CSD18511KTTT	110 A	N-Channel	10 V	4.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.4 V	Surface Mount	64 nC	20 V	188 W	TO-263 (DDPAK-3)	5940 pF	MOSFET (Metal Oxide)	40 V	2.6 mOhm	-55 °C	175 °C
Texas Instruments CSD18511Q5A		N-Channel	10 V	4.5 V	8-PowerTDFN	2.45 V	Surface Mount	63 nC	20 V	104 W	8-VSONP	5850 pF	MOSFET (Metal Oxide)	40 V	3.5 mOhm	-55 °C	150 °C	159 A	6 mm	5 mm

Catalog

40-V, N channel NexFET™ power MOSFET, single D2PAK, 2.6 mOhm

Description

This 40V, 2.1mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 40V, 2.1mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.