STWA68N65DM6AG Series
Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package
Manufacturer: STMicroelectronics
Catalog
Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package
| Part | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Qualification | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STWA68N65DM6AG | 25 V | -55 °C | 150 °C | 4.75 V | 480 W | 650 V | 118 nC | TO-247 Long Leads | 5900 pF | N-Channel | 39 mOhm | MOSFET (Metal Oxide) | 72 A | AEC-Q101 | Through Hole | 10 V | TO-247-3 | Automotive |
STMicroelectronics STWA68N65DM6AG | ||||||||||||||||||
STMicroelectronics STWA68N65DM6AG | ||||||||||||||||||
STMicroelectronics STWA68N65DM6AG |
Description
AI
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.