STWA68N65DM6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 33 MOHM TYP., 72 A MDMESH DM6 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

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STWA68N65DM6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 33 MOHM TYP., 72 A MDMESH DM6 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

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DocumentsTN1225 +24

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Technical Specifications

Parameters and characteristics for this part

Specification	STWA68N65DM6AG

Current - Continuous Drain (Id) @ 25°C	72 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	5900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	480 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	39 mOhm
Supplier Device Package	TO-247 Long Leads
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STWA68 Series

Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Qualification	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Grade
STMicroelectronics STWA68N65DM6AG	25 V	-55 °C	150 °C	4.75 V	480 W	650 V	118 nC	TO-247 Long Leads	5900 pF	N-Channel	39 mOhm	MOSFET (Metal Oxide)	72 A	AEC-Q101	Through Hole	10 V	TO-247-3	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	600	$ 7.62
Newark	Each	1	$ 11.10

Description

General part information

STWA68 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

STWA68N65DM6AG

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STWA68N65DM6AG

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Technical Specifications

STWA68 Series

Pricing

Description

STWA68 Series

Documents

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Product Change Notice EN

Technical Data Sheet EN

Technical Specifications

STWA68 Series