FDMS8558S Series

N-Channel PowerTrench® SyncFET™ MOSFET, 25V, 90A, 1.5mΩ

Catalog

N-Channel PowerTrench® SyncFET™ MOSFET, 25V, 90A, 1.5mΩ

Part	Drain to Source Voltage (Vdss)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Package Length	Package Name	Package Width	Vgs (Max)	Gate Charge (Max)	Package / Case	Technology	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	FET Type	Mounting Type	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)
ON Semiconductor FDMS8558S	25 V	1.5 mOhm	10 V	4.5 V	2.5 W 78 W	5118 pF	5 mm	8-PQFN	6 mm	12 V	81 nC	8-PowerTDFN	MOSFET (Metal Oxide)	90 A	33 A	N-Channel	Surface Mount	2.2 V	-55 °C	150 °C

Catalog

N-Channel PowerTrench® SyncFET™ MOSFET, 25V, 90A, 1.5mΩ

Key Features

• Dual Cool™ PQFN package

• Max rDS(on)= 1.5 mΩ at VGS= 10 V, ID= 33 A

• Max rDS(on)= 1.7 mΩ at VGS= 4.5 V, ID= 31 A

• High performance technology for extremely low rDS(on)

• SyncFET™ Schottky Body Diode

• RoHS Compliant

Description

This N-Channel SyncFET™ is produced using an advanced PowerTrench®process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.