FDMS8558S
ObsoleteN-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET™ MOSFET, 25V, 90A, 1.5MΩ
FDMS8558S
ObsoleteN-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET™ MOSFET, 25V, 90A, 1.5MΩ
Description
General part information
FDMS8558S Series
This N-Channel SyncFET™ is produced using an advanced PowerTrench®process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS8558S |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 33 A |
| Current - Continuous Drain (Id) (Tc) | 90 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 81 nC |
| Input Capacitance (Ciss) (Max) | 5118 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 5 mm |
| Package Name | 8-PQFN |
| Package Width | 6 mm |
| Power Dissipation (Max) | 2.5 W, 78 W |
| Rds On (Max) | 1.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
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CAD
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Documents
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