Catalog(5 parts)
Part | Logic Type | Current - Quiescent (Max)▲▼ | Operating Temperature▲▼ | Operating Temperature▲▼ | Current - Output High, Low▲▼ | Current - Output High, Low▲▼ | Number of Circuits▲▼ | Package / Case▲▼ | Package / Case | Package / Case▲▼ | Max Propagation Delay @ V, Max CL▲▼ | Mounting Type | Number of Inputs▲▼ | Input Logic Level - Low▲▼ | Input Logic Level - Low▲▼ | Voltage - Supply▲▼ | Voltage - Supply▲▼ | Input Logic Level - High▲▼ | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NOR Gate | 0.000009999999747378752 A | -40 °C | 85 °C | 0.008999999612569809 A | 0.008999999612569809 A | 2 ul | 0.002311399905011058 m | 8-VFSOP | 0.002300000051036477 m | 1.8999999351621e-9 s | Surface Mount | 2 ul | 0 V | 0.699999988079071 V | 0.800000011920929 V | 2.700000047683716 V | 1.7000000476837158 V | ||
NOR Gate | 0.000009999999747378752 A | -40 °C | 85 °C | 0.008999999612569809 A | 0.008999999612569809 A | 2 ul | 0.002311399905011058 m | 8-VFSOP | 0.002300000051036477 m | 1.8999999351621e-9 s | Surface Mount | 2 ul | 0 V | 0.699999988079071 V | 0.800000011920929 V | 2.700000047683716 V | 1.7000000476837158 V | ||
NOR Gate | 0.000009999999747378752 A | -40 °C | 85 °C | 0.008999999612569809 A | 0.008999999612569809 A | 2 ul | 1.8999999351621e-9 s | Surface Mount | 2 ul | 0 V | 0.699999988079071 V | 0.800000011920929 V | 2.700000047683716 V | 1.7000000476837158 V | SM8 | ||||
NOR Gate | 0.000009999999747378752 A | -40 °C | 85 °C | 0.008999999612569809 A | 0.008999999612569809 A | 2 ul | 8-XFBGA, DSBGA | 1.8999999351621e-9 s | Surface Mount | 2 ul | 0 V | 0.699999988079071 V | 0.800000011920929 V | 2.700000047683716 V | 1.7000000476837158 V | 8-DSBGA | |||
NOR Gate | 0.000009999999747378752 A | -40 °C | 85 °C | 0.008999999612569809 A | 0.008999999612569809 A | 2 ul | 8-XFBGA, DSBGA | 1.8999999351621e-9 s | Surface Mount | 2 ul | 0 V | 0.699999988079071 V | 0.800000011920929 V | 2.700000047683716 V | 1.7000000476837158 V | 8-DSBGA |
Key Features
• Available in the Texas Instruments NanoFree™ PackageOptimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal OperationIoffSupports Partial Power-Down-Mode OperationSub-1-V OperableMax tpdof 1.8 ns at 1.8 VLow Power Consumption, 10 µA at 1.8 V±8-mA Output Drive at 1.8 VLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)200-V Machine Model (A115-A)1000-V Charged-Device Model (C101)NanoFree is a trademark of Texas Instruments.Available in the Texas Instruments NanoFree™ PackageOptimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal OperationIoffSupports Partial Power-Down-Mode OperationSub-1-V OperableMax tpdof 1.8 ns at 1.8 VLow Power Consumption, 10 µA at 1.8 V±8-mA Output Drive at 1.8 VLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)200-V Machine Model (A115-A)1000-V Charged-Device Model (C101)NanoFree is a trademark of Texas Instruments.
Description
AI
This dual 2-input positive-NOR gate is operational at 0.8-V to 2.7-V VCC, but is designed specifically for 1.65-V to 1.95-V VCCoperation.
The SN74AUC2G02 performs the Boolean function Y =A + Bor Y =A•Bin positive logic.
NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.
This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
This dual 2-input positive-NOR gate is operational at 0.8-V to 2.7-V VCC, but is designed specifically for 1.65-V to 1.95-V VCCoperation.
The SN74AUC2G02 performs the Boolean function Y =A + Bor Y =A•Bin positive logic.
NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.
This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.