BQ2204 Series

SRAM Nonvolatile Controller IC for 4 SRAM Banks

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Catalog

SRAM Nonvolatile Controller IC for 4 SRAM Banks

Part	Supplier Device Package	Controller Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case
Texas Instruments BQ2204APN	16-PDIP	Nonvolatile SRAM	Through Hole	70 ░C	0 °C	5.5 V	4.5 V	0.3 in, 7.62 mm	16-DIP
Texas Instruments BQ2204ASN	16-SOIC	Nonvolatile SRAM	Surface Mount	70 ░C	0 °C	5.5 V	4.5 V	0.154 in, 3.9 mm Width	16-SOIC
Texas Instruments BQ2204ASN-NTRG4	16-SOIC	Nonvolatile SRAM	Surface Mount	85 °C	-40 °C	5.5 V	4.5 V	0.154 in, 3.9 mm Width	16-SOIC
Texas Instruments BQ2204ASN-N	16-SOIC	Nonvolatile SRAM	Surface Mount	85 °C	-40 °C	5.5 V	4.5 V	0.154 in, 3.9 mm Width	16-SOIC
Texas Instruments BQ2204ASNTR	16-SOIC	Nonvolatile SRAM	Surface Mount	70 ░C	0 °C	5.5 V	4.5 V	0.154 in, 3.9 mm Width	16-SOIC

Key Features

• Power monitoring and switching for 3-volt battery-backup applicationsWrite-protect control2-input decoder for control of up to 4 banks of SRAM3-volt primary cell inputsLess than 10ns chip-enable propagation delay5% or 10% supply operationPower monitoring and switching for 3-volt battery-backup applicationsWrite-protect control2-input decoder for control of up to 4 banks of SRAM3-volt primary cell inputsLess than 10ns chip-enable propagation delay5% or 10% supply operation

Description

The CMOS bq2204A SRAM Non-volatile Controller Unit provides all necessary functions for converting up to four banks of standard CMOS SRAM into nonvolatile read/write memory. A precision comparator monitors the 5V VCCinput for an out-of-tolerance condi-tion. When out-of-tolerance is detected, the four conditioned chip-enable outputs are forced inactive to write-protect up to four banks of SRAM. During a power failure, the external SRAMs are switched from the VCCsupply to one of two 3V backup sup-plies. On a subsequent power-up, the SRAMs are write-protected until a power-valid condition exists. During power-valid operation, a two-input decoder transparently selects one of up to four banks of SRAM. The CMOS bq2204A SRAM Non-volatile Controller Unit provides all necessary functions for converting up to four banks of standard CMOS SRAM into nonvolatile read/write memory. A precision comparator monitors the 5V VCCinput for an out-of-tolerance condi-tion. When out-of-tolerance is detected, the four conditioned chip-enable outputs are forced inactive to write-protect up to four banks of SRAM. During a power failure, the external SRAMs are switched from the VCCsupply to one of two 3V backup sup-plies. On a subsequent power-up, the SRAMs are write-protected until a power-valid condition exists. During power-valid operation, a two-input decoder transparently selects one of up to four banks of SRAM.