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74LVC1G38 Series

Single 2-input, 1.65-V to 5.5-V NAND gate with open-drain outputs

Manufacturer: Texas Instruments

Catalog(6 parts)

PartNumber of Circuits▲▼Max Propagation Delay @ V, Max CL▲▼Package / CaseFeaturesCurrent - Quiescent (Max)▲▼Logic TypeVoltage - Supply▲▼Voltage - Supply▲▼Operating Temperature▲▼Operating Temperature▲▼Input Logic Level - High▲▼Input Logic Level - High▲▼Mounting TypeSupplier Device PackageCurrent - Output High, LowCurrent - Output High, Low▲▼Number of Inputs▲▼Input Logic Level - Low▲▼Input Logic Level - Low▲▼Max Propagation Delay @ V, Max CL▲▼Supplier Device Package▲▼Supplier Device Package▲▼
Texas Instruments
SN74LVC1G38DBVT
NAND Gate IC 1 Channel Open Drain SOT-23-5
1 ul
3.899999878598237e-9 s
SC-74A, SOT-753
Open Drain
0.000009999999747378752 A
NAND Gate
5.5 V
1.649999976158142 V
125 °C
-40 °C
1.7000000476837158 V
2 V
Surface Mount
SOT-23-5
-
0.03200000151991844 A
2 ul
0.800000011920929 V
0.699999988079071 V
Texas Instruments
SN74LVC1G38DBVRE4
NAND Gate IC 1 Channel Open Drain SOT-23-5
1 ul
3.899999878598237e-9 s
SC-74A, SOT-753
Open Drain
0.000009999999747378752 A
NAND Gate
5.5 V
1.649999976158142 V
125 °C
-40 °C
1.7000000476837158 V
2 V
Surface Mount
SOT-23-5
-
0.03200000151991844 A
2 ul
0.800000011920929 V
0.699999988079071 V
Texas Instruments
SN74LVC1G38YZPR
NAND Gate IC 1 Channel Open Drain 5-DSBGA (1.4x0.9)
1 ul
3.899999878598237e-9 s
5-XFBGA, DSBGA
Open Drain
0.000009999999747378752 A
NAND Gate
5.5 V
1.649999976158142 V
85 °C
-40 °C
1.7000000476837158 V
2 V
Surface Mount
5-DSBGA (1.4x0.9)
-
0.03200000151991844 A
2 ul
0.800000011920929 V
0.699999988079071 V
Texas Instruments
SN74LVC1G38DPWR
NAND Gate IC 1 Channel Open Drain 5-X2SON (0.8x0.8)
1 ul
4-XFDFN Exposed Pad
Open Drain
0.000009999999747378752 A
NAND Gate
5.5 V
1.649999976158142 V
85 °C
-40 °C
1.2000000476837158 V
2 V
Surface Mount
5-X2SON (0.8x0.8)
-
0.03200000151991844 A
2 ul
0.800000011920929 V
0.699999988079071 V
4.399999919968422e-9 s
Texas Instruments
SN74LVC1G38YEPR
NAND Gate IC 1 Channel Open Drain 5-DSBGA (1.4x0.9)
1 ul
3.899999878598237e-9 s
5-XFBGA, DSBGA
Open Drain
0.000009999999747378752 A
NAND Gate
5.5 V
1.649999976158142 V
85 °C
-40 °C
1.7000000476837158 V
2 V
Surface Mount
5-DSBGA (1.4x0.9)
-
0.03200000151991844 A
2 ul
0.800000011920929 V
0.699999988079071 V
Texas Instruments
SN74LVC1G38DRYR
NAND Gate IC 1 Channel Open Drain 6-SON (1.45x1)
1 ul
3.899999878598237e-9 s
6-UFDFN
Open Drain
0.000009999999747378752 A
NAND Gate
5.5 V
1.649999976158142 V
125 °C
-40 °C
1.7000000476837158 V
2 V
Surface Mount
6-SON
-
0.03200000151991844 A
2 ul
0.800000011920929 V
0.699999988079071 V
1 ul
1.4500000476837158 ul

Key Features

• Latch-up performance exceeds 100 mA Per JESD 78, Class IIESD protection exceeds JESD 222000-V Human-body model (A114-A)200-V Machine model (A115-A)1000-V Charged-device model (C101)Available in the Texas InstrumentsNanoStar™ and NanoFree™ PackagesSupports 5-V VCCoperationInputs accept voltages to 5.5 VSupports down translation to VCCMaximum tpdof 4.5 ns at 3.3 VLow power consumption, 10-µA maximum ICC±24-mA Output drive at 3.3 VIoffSupports partial-power-down mode and back-drive protectionLatch-up performance exceeds 100 mA Per JESD 78, Class IIESD protection exceeds JESD 222000-V Human-body model (A114-A)200-V Machine model (A115-A)1000-V Charged-device model (C101)Available in the Texas InstrumentsNanoStar™ and NanoFree™ PackagesSupports 5-V VCCoperationInputs accept voltages to 5.5 VSupports down translation to VCCMaximum tpdof 4.5 ns at 3.3 VLow power consumption, 10-µA maximum ICC±24-mA Output drive at 3.3 VIoffSupports partial-power-down mode and back-drive protection

Description

AI
The SN74LVC1G38 device is designed for 1.65-V to 5.5-V VCCoperation. This device is a single two-input NAND buffer gate with open-drain output. It performs the Boolean function Y =A × Bor Y =A+Bin positive logic. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device. NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package. The SN74LVC1G38 device is designed for 1.65-V to 5.5-V VCCoperation. This device is a single two-input NAND buffer gate with open-drain output. It performs the Boolean function Y =A × Bor Y =A+Bin positive logic. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device. NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.