CSD17304 Series
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.8 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.8 mOhm
| Part | Technology | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Power Dissipation (Max) [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17304Q3 | MOSFET (Metal Oxide) | N-Channel | 3 V, 8 V | 7.5 mOhm | 955 pF | 30 V | -8 V, 10 V | 6.6 nC | 1.8 V | 150 °C | -55 °C | Surface Mount | 2.7 W | 8-VSON-CLIP (3.3x3.3) | 15 A, 56 A | 8-PowerTDFN |
Key Features
• Optimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint-of-Load Synchronous Buck in Networking, Telecom,and Computing SystemsNexFET is a trademark of Texas Instruments.Optimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint-of-Load Synchronous Buck in Networking, Telecom,and Computing SystemsNexFET is a trademark of Texas Instruments.
Description
AI
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.