TLE2022 Series

Excalibur high-speed low-power precision dual operational amplifier with wide temperature ranges

Catalog

Excalibur high-speed low-power precision dual operational amplifier with wide temperature ranges

Part	Package Length	Package Name	Package Width	Voltage - Supply Span (Min)	Current - Supply	Gain Bandwidth Product	Voltage - Input Offset	Voltage - Supply Span (Max)	Qualification	Amplifier Type	Number of Circuits	Mounting Type	Slew Rate	Operating Temperature (Max)	Operating Temperature (Min)	Current - Input Bias	Current - Output / Channel	Grade
Texas Instruments TLE2022AQDRG4Q1	0.154 in	8-SOIC	3.9 mm	4 V	170 µA	1.7 MHz	100 µV	40 V	AEC-Q100	General Purpose	2	Surface Mount	0.5 V/µs	125 °C	-40 °C	33 nA	30 mA	Automotive
Texas Instruments TLE2022ACPG4	0.3 in	8-DIP 8-PDIP	7.62 mm	4 V	550 µA	2.8 MHz	120 µV	40 V		General Purpose	2	Through Hole	0.65 V/µs	70 °C	0 °C	33 nA	30 mA
Texas Instruments TLE2022AMDR	0.154 in	8-SOIC	3.9 mm	4 V	550 µA	1.7 MHz	120 µV	40 V		General Purpose	2	Surface Mount	0.65 V/µs	125 °C	-55 °C	33 nA	30 mA
Texas Instruments TLE2022IPG4	0.3 in	8-DIP 8-PDIP	7.62 mm	4 V	550 µA	2.8 MHz	150 µV	40 V		General Purpose	2	Through Hole	0.65 V/µs	85 °C	-40 °C	35 nA	30 mA
Texas Instruments TLE2022AMDG4	0.154 in	8-SOIC	3.9 mm	4 V	550 µA	1.7 MHz	120 µV	40 V		General Purpose	2	Surface Mount	0.65 V/µs	125 °C	-55 °C	33 nA	30 mA
Texas Instruments TLE2022CDR	0.154 in	8-SOIC	3.9 mm	4 V	550 µA	2.8 MHz	150 µV	40 V		General Purpose	2	Surface Mount	0.65 V/µs	70 °C	0 °C	35 nA	30 mA
Texas Instruments TLE2022QDRQ1	0.154 in	8-SOIC	3.9 mm	4 V	170 µA	2.8 MHz	120 µV	40 V	AEC-Q100	General Purpose	2	Surface Mount	0.5 V/µs	125 °C	-40 °C	35 nA	30 mA	Automotive
Texas Instruments TLE2022QDRG4Q1	0.154 in	8-SOIC	3.9 mm	4 V	170 µA	2.8 MHz	120 µV	40 V	AEC-Q100	General Purpose	2	Surface Mount	0.5 V/µs	125 °C	-40 °C	35 nA	30 mA	Automotive
Texas Instruments TLE2022MDG4	0.154 in	8-SOIC	3.9 mm	4 V	550 µA	2.8 MHz	150 µV	40 V		General Purpose	2	Surface Mount	0.65 V/µs	125 °C	-55 °C	35 nA	30 mA
Texas Instruments TLE2022MDRG4	0.154 in	8-SOIC	3.9 mm	4 V	550 µA	2.8 MHz	150 µV	40 V		General Purpose	2	Surface Mount	0.65 V/µs	125 °C	-55 °C	35 nA	30 mA

Catalog

Excalibur high-speed low-power precision dual operational amplifier with wide temperature ranges

Description

The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth. The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices. The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use. This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail. A variety of available options includes small-outline and chip-carrier versions for high-density systems applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C. The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth. The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices. The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use. This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail. A variety of available options includes small-outline and chip-carrier versions for high-density systems applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.