AUIRF2804 Series

Catalog

INFINEON’S AUIRF2804L WITH ADVANCED PROCESS TECHNOLOGY, ULTRA-LOW ON-RESISTANCE, 175°C OPERATING TEMP, AUTOMOTIVE QUALIFIED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Part	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Qualification	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Grade	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies AUIRF2804L	20 V	I2PAK TO-262-3 Long Leads TO-262AA	2 mOhm	Through Hole	6450 pF	4 V	TO-262	240 nC	300 W	10 V	195 A	40 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	N-Channel
Infineon Technologies AUIRF2804S-7P	20 V	D2PAK TO-263-7 TO-263CB	1.6 mOhm	Surface Mount		4 V	D2PAK (7-Lead)			10 V	240 A	40 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	N-Channel	AEC-Q101	330 W	6930 pF	Automotive	260 nC
Infineon Technologies AUIRF2804STRL	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 mOhm	Surface Mount	6450 pF	4 V	D2PAK	240 nC	300 W	10 V	195 A	40 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	N-Channel
Infineon Technologies AUIRF2804WL	20 V	TO-262-3 Wide Leads	1.8 mOhm	Through Hole		4 V	TO-262-3 Wide	225 nC	300 W	10 V	240 A	40 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	N-Channel			7978 pF