MOSFET N-CH 60V 120A TO263
| Part | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs (Max) | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUM50020E-GE3 | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | -55 °C | 175 ░C | 60 V | Surface Mount | 128 nC | 4 V | N-Channel | 10 V | 7.5 V | 2.2 mOhm | 120 A | TO-263 (D2PAK) | 20 V | 375 W | 11150 pF | MOSFET (Metal Oxide) | |
Vishay Siliconix SUM50020EL-GE3 | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | -55 °C | 175 ░C | 60 V | Surface Mount | 126 nC | 2.5 V | N-Channel | 2.1 mOhm | 120 A | TO-263 (D2PAK) | 20 V | 375 W | 11113 pF | MOSFET (Metal Oxide) | 4.5 V, 10 V |