SUM50020E-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 120A TO263

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 120A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM50020E-GE3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	128 nC
Input Capacitance (Ciss) (Max) @ Vds	11150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Vishay General Semiconductor - Diodes Division SUM50020EL-GE3	MOSFET (Metal Oxide)	375 W	Surface Mount	60 V	4.5 V 10 V	120 A	126 nC	20 V	N-Channel	11113 pF	TO-263 (D2PAK)	-55 °C	175 ░C	2.1 mOhm	2.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division SUM50020E-GE3	MOSFET (Metal Oxide)	375 W	Surface Mount	60 V		120 A	128 nC	20 V	N-Channel	11150 pF	TO-263 (D2PAK)	-55 °C	175 ░C	2.2 mOhm	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	7.5 V

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General part information

N-Channel 60 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources