MOSFET N-CH 60V 120A TO263
| Part | Technology | Power Dissipation (Max) [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division  | MOSFET (Metal Oxide)  | 375 W  | Surface Mount  | 60 V  | 4.5 V  10 V  | 120 A  | 126 nC  | 20 V  | N-Channel  | 11113 pF  | TO-263 (D2PAK)  | -55 °C  | 175 ░C  | 2.1 mOhm  | 2.5 V  | D2PAK (2 Leads + Tab)  TO-263-3  TO-263AB  | ||
Vishay General Semiconductor - Diodes Division  | MOSFET (Metal Oxide)  | 375 W  | Surface Mount  | 60 V  | 120 A  | 128 nC  | 20 V  | N-Channel  | 11150 pF  | TO-263 (D2PAK)  | -55 °C  | 175 ░C  | 2.2 mOhm  | 4 V  | D2PAK (2 Leads + Tab)  TO-263-3  TO-263AB  | 10 V  | 7.5 V  |