TPS40101 Series

4.5-V to 18-V, synchronous buck controller with advanced sequencing and output margining

Catalog

4.5-V to 18-V, synchronous buck controller with advanced sequencing and output margining

Part	Package Length	Package Name	Package Width	Voltage - Supply (Vcc/Vdd) Maximum	Voltage - Supply (Vcc/Vdd) Minimum	Output Configuration	Clock Sync	Output Phases	Control Features	Package / Case	Number of Outputs	Topology	Frequency - Switching (Max)	Frequency - Switching (Min)	Operating Temperature (Max)	Operating Temperature (Min)	Synchronous Rectifier	Function	Mounting Type	Output Type
Texas Instruments TPS40101RGER	4 mm	24-VQFN	4 mm	18 V	4.5 V	Positive	Yes	1	Current Limit Frequency Control Power Good Soft Start Tracking	24-VFQFN Exposed Pad	1	Buck	1 MHz	100 kHz	85 °C	-40 °C	Yes	Step-Down	Surface Mount	Transistor Driver
Texas Instruments TPS40101RGET	4 mm	24-VQFN	4 mm	18 V	4.5 V	Positive	Yes	1	Current Limit Frequency Control Power Good Soft Start Tracking	24-VFQFN Exposed Pad	1	Buck	1 MHz	100 kHz	85 °C	-40 °C	Yes	Step-Down	Surface Mount	Transistor Driver

Catalog

4.5-V to 18-V, synchronous buck controller with advanced sequencing and output margining

Description

The TPS40101 is a wide-input synchronous, step-down controller that offers programmable closed loop soft-start, programmable UVLO and hysteresis, programmable current limit with hiccup recovery and can be synchronized to other timebases. The TPS40101 incorporates MOSFET gate drivers for external N-channel MOSFETs. Gate drive logic incorporates adaptive anti-cross conduction circuitry for improved efficiency, reducing diode conduction in the rectifier MOSFET. The TPS40101 is a wide-input synchronous, step-down controller that offers programmable closed loop soft-start, programmable UVLO and hysteresis, programmable current limit with hiccup recovery and can be synchronized to other timebases. The TPS40101 incorporates MOSFET gate drivers for external N-channel MOSFETs. Gate drive logic incorporates adaptive anti-cross conduction circuitry for improved efficiency, reducing diode conduction in the rectifier MOSFET.