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IPT020N10N3ATMA1 - INFINEON IPT020N10N3ATMA1

IPT020N10N3ATMA1

NRND
Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 300 A, 0.0017 OHM, HSOF, SURFACE MOUNT

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IPT020N10N3ATMA1 - INFINEON IPT020N10N3ATMA1

IPT020N10N3ATMA1

NRND
Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 300 A, 0.0017 OHM, HSOF, SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPT020N10N3ATMA1
Current - Continuous Drain (Id) @ 25°C300 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]156 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]11200 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerSFN
Power Dissipation (Max) [Max]375 W
Rds On (Max) @ Id, Vgs2 mOhm
Supplier Device PackagePG-HSOF-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 8.62
10$ 5.90
100$ 4.35
500$ 3.91
Digi-Reel® 1$ 8.62
10$ 5.90
100$ 4.35
500$ 3.91
Tape & Reel (TR) 2000$ 3.91

Description

General part information

IPT020 Series

Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

Documents

Technical documentation and resources