IMBG65R050M2HXTMA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 41 A, 650 V, 0.046 OHM, TO-263

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IMBG65R050M2HXTMA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 41 A, 650 V, 0.046 OHM, TO-263

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMBG65R050M2HXTMA1

Current - Continuous Drain (Id) @ 25°C	41 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	15 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds	790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)	172 W
Rds On (Max) @ Id, Vgs	62 mOhm
Supplier Device Package	PG-TO263-7-12
Vgs (Max)	-7 V, 23 V
Vgs(th) (Max) @ Id	5.6 V

IMBG65R050 Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IMBG65R050M2HXTMA1	790 pF	172 W	N-Channel	-55 °C	175 ░C	62 mOhm	Surface Mount	5.6 V	41 A	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	650 V	-7 V 23 V	PG-TO263-7-12	15 V	20 V	22 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 8.50
		10	$ 7.68
		25	$ 7.32
		100	$ 6.36
		250	$ 6.07
		500	$ 5.54
	Digi-Reel®	1	$ 8.50
		10	$ 7.68
		25	$ 7.32
		100	$ 6.36
		250	$ 6.07
		500	$ 5.54
	Tape & Reel (TR)	1000	$ 4.82
		2000	$ 4.64
Newark	Each (Supplied on Cut Tape)	1	$ 8.13
		10	$ 6.29
		25	$ 5.83
		50	$ 5.56
		100	$ 5.28
		250	$ 4.97
		500	$ 4.74
		1000	$ 4.72

Description

General part information

IMBG65R050 Series

The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Documents

Technical documentation and resources