Zenode.ai Logo
Beta
K
STW63N65DM2 - TO247-3

STW63N65DM2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.042 OHM TYP., 60 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
STW63N65DM2 - TO247-3

STW63N65DM2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.042 OHM TYP., 60 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW63N65DM2
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]120 nC
Input Capacitance (Ciss) (Max) @ Vds5500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)446 W
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 600$ 7.55

Description

General part information

STW63N65DM2 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high- efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources