
2ED4820EMXUMA2
ActiveTHE EICEDRIVER 2ED4820-EM IS A SMART HIGH-SIDE N-CHANNEL MOSFET GATE DRIVER WITH TWO OUTPUTS CONTROLLED VIA SPI FOR 48V INDUSTRY AND AUTOMOTIVE APPLICATIONS.
Deep-Dive with AI
Search across all available documentation for this part.

2ED4820EMXUMA2
ActiveTHE EICEDRIVER 2ED4820-EM IS A SMART HIGH-SIDE N-CHANNEL MOSFET GATE DRIVER WITH TWO OUTPUTS CONTROLLED VIA SPI FOR 48V INDUSTRY AND AUTOMOTIVE APPLICATIONS.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2ED4820EMXUMA2 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 300 mA |
| Current - Peak Output (Source, Sink) [custom] | 1.3 A |
| Driven Configuration | High-Side |
| Gate Type | N-Channel MOSFET |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 2.6 V, 0.4 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Rise / Fall Time (Typ) | 3 µs |
| Rise / Fall Time (Typ) [Max] | 3 µs |
| Voltage - Supply [Max] | 70 VDC |
| Voltage - Supply [Min] | 20 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
2EDF5215 Series
The EiceDRIVERTM2ED4820-EM is a smart high-side N-channel MOSFET Gate driver with two outputs controlled via SPI. The integrated powerful charge pump allows external MOSFETs to stay continuously on. Thanks to the enhanced turn-on and turn-off ability of the driver the number of MOSFETs could be easily scaled up to manage large currents in the order of several hundred amps while ensuring a fast switch on and off. The MOSFETs could be controlled in a back-to-back configuration either common mode or common source. The integrated current sense amplifier supports high-side and even low-side current measurement with a dedicated monitoring output. The 2ED4820-EM comes along with several latching failure detections, to implement protections for the external MOSFETs, the load, and the power source. Parameters can be adjusted by SPI; monitoring data, configuration, warning, and failure detection registers can be read.
Documents
Technical documentation and resources