IPP80R750P7XKSA1

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Infineon Technologies

MOSFET N-CH 800V 7A TO220-3

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LTB

Infineon Technologies

MOSFET N-CH 800V 7A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP80R750P7XKSA1

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	460 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	51 W
Rds On (Max) @ Id, Vgs [Max]	750 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs (Max)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Technology	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPP80R750P7XKSA1	20 V	Through Hole	TO-220-3	460 pF	17 nC	-55 °C	150 °C	750 mOhm	MOSFET (Metal Oxide)	N-Channel	3.5 V	51 W	10 V	800 V	PG-TO220-3	7 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.25

General part information

N-Channel 800 V 7A (Tc) 51W (Tc) Through Hole PG-TO220-3

Technical documentation and resources