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DMN1003UCA6-7 - Package Image for X3-DSN3518-6

DMN1003UCA6-7

Active
Diodes Inc

12V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN1003UCA6-7 - Package Image for X3-DSN3518-6

DMN1003UCA6-7

Active
Diodes Inc

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN1003UCA6-7
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs [Max]56.5 nC
Input Capacitance (Ciss) (Max) @ Vds3315 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-SMD, No Lead
Power - Max [Max]2.67 W
Supplier Device PackageX3-DSN3518-6
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.84
10$ 0.69
100$ 0.54
500$ 0.46
1000$ 0.37
Digi-Reel® 1$ 1.38
10$ 0.87
100$ 0.58
500$ 0.45
1000$ 0.41
Tape & Reel (TR) 3000$ 0.36
6000$ 0.33
9000$ 0.33

Description

General part information

DMN1003UCA6 Series

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.