IGC99T120T8RQX1SA1

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Infineon Technologies

IGBT CHIP

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IGC99T120T8RQX1SA1

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Infineon Technologies

IGBT CHIP

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IGC99T120T8RQX1SA1

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	300 A
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Die
Supplier Device Package	Die
Vce(on) (Max) @ Vge, Ic	2.42 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

IGC99T120 Series

Part	IGBT Type	Package / Case	Mounting Type	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]
Infineon Technologies IGC99T120T8RLX1SA3	Trench Field Stop	Die	Surface Mount	1.97 V	300 A	Die	1200 V
Infineon Technologies IGC99T120T8RQX1SA1	Trench Field Stop	Die	Surface Mount	2.42 V	300 A	Die	1200 V	-40 C	175 °C	100 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IGC99T120 Series

Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses.

Documents

Technical documentation and resources