BPW77NA

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Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1080 NM

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Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1080 NM

Technical Specifications

Parameters and characteristics for this part

Specification	BPW77NA

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Dark (Id) (Max) [Max]	100 nA
Mounting Type	Through Hole
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	TO-18-3 Metal Can, TO-206AA
Power - Max [Max]	250 mW
Viewing Angle	20 °
Voltage - Collector Emitter Breakdown (Max) [Max]	70 V
Wavelength	850 nm

Part	Wavelength	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Package / Case	Orientation	Current - Collector (Ic) (Max) [Max]	Viewing Angle	Mounting Type	Current - Dark (Id) (Max) [Max]
Vishay General Semiconductor - Diodes Division BPW77NA	850 nm	125 °C	-40 °C	70 V	250 mW	TO-18-3 Metal Can TO-206AA	Top View	50 mA	20 °	Through Hole	100 nA

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General part information

Phototransistors 850nm Top View TO-206AA, TO-18-3 Metal Can

Technical documentation and resources