BC856A RFG

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BIPOLAR TRANSISTORS - BJT -80V, -0.1A, PNP BIPOLAR TRANSISTOR

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BIPOLAR TRANSISTORS - BJT -80V, -0.1A, PNP BIPOLAR TRANSISTOR

Description

General part information

Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW Surface Mount SOT-23

Parameters and characteristics for this part

Specification	BC856A RFG

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	125
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23
Power - Max	200 mW
Transistor Type	PNP
Vce Saturation (Max)	650 mV
Voltage - Collector Emitter Breakdown (Max)	65 V

Part	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max)	DC Current Gain (hFE) (Min)	Package Name	Power - Max	Current - Collector (Ic) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Collector Cutoff (Max)	Mounting Type	Transistor Type	Package / Case	Frequency - Transition
Taiwan Semiconductor Corporation BC856B RFG	65 V	650 mV	220	SOT-23	200 mW	0.1 mA	-55 °C	150 °C	100 nA	Surface Mount	PNP	SC-59 SOT-23-3 TO-236-3	100 MHz
Taiwan Semiconductor Corporation BC856A RFG	65 V	650 mV	125	SOT-23	200 mW	0.1 mA	-55 °C	150 °C	100 nA	Surface Mount	PNP	SC-59 SOT-23-3 TO-236-3	100 MHz

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