STW75N60M6

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STMicroelectronics

N-CHANNEL 600 V, 32 MOHM TYP., 72 A MDMESH M6 POWER MOSFET IN A TO-247 PACKAGE

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STW75N60M6

Active

STMicroelectronics

N-CHANNEL 600 V, 32 MOHM TYP., 72 A MDMESH M6 POWER MOSFET IN A TO-247 PACKAGE

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DocumentsDatasheet Product Change Notice EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW75N60M6

Current - Continuous Drain (Id) @ 25°C	72 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	106 nC
Input Capacitance (Ciss) (Max) @ Vds	4850 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	446 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STW75N60M6-4 Series

N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO247-4 package

Part	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Technology
STMicroelectronics STW75N60M6-4	TO-247-4	25 V	4850 pF	36 mOhm	-55 °C	150 °C	4.75 V	Through Hole	72 A	10 V	106 nC	446 W	N-Channel	600 V	TO-247-4	MOSFET (Metal Oxide)
STMicroelectronics STW75N60M6	TO-247-3	25 V	4850 pF	36 mOhm	-55 °C	150 °C	4.75 V	Through Hole	72 A	10 V	106 nC	446 W	N-Channel	600 V	TO-247-3	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	600	$ 4.41
Newark	Each	1	$ 8.03

Description

General part information

STW75N60M6-4 Series

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.