IPZ65R019C7XKSA1
ActiveInfineon Technologies
COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 4PIN PACKAGE; 19 MOHM; HIGHEST PERFORMANCE
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IPZ65R019C7XKSA1
ActiveInfineon Technologies
COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 4PIN PACKAGE; 19 MOHM; HIGHEST PERFORMANCE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPZ65R019C7XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 75 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 215 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 9900 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 446 W |
| Rds On (Max) @ Id, Vgs | 19 mOhm |
| Supplier Device Package | PG-TO247-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPZ65R019 Series
Infineon’sCoolMOS™ C7 superjunction MOSFETseries is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
Documents
Technical documentation and resources