BSC0402NSATMA1
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; PACKAGE; 9.3 MOHM;
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BSC0402NSATMA1
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; PACKAGE; 9.3 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSC0402NSATMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8 V, 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) [Max] | 139 W |
| Rds On (Max) @ Id, Vgs [Max] | 9.3 mOhm |
| Supplier Device Package | PG-TDSON-8-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.81 | |
| 10 | $ 2.50 | |||
| 100 | $ 1.76 | |||
| 500 | $ 1.44 | |||
| 1000 | $ 1.33 | |||
| 2000 | $ 1.31 | |||
| Digi-Reel® | 1 | $ 3.81 | ||
| 10 | $ 2.50 | |||
| 100 | $ 1.76 | |||
| 500 | $ 1.44 | |||
| 1000 | $ 1.33 | |||
| 2000 | $ 1.31 | |||
| Tape & Reel (TR) | 5000 | $ 1.31 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 3.94 | |
| 10 | $ 2.59 | |||
| 25 | $ 2.33 | |||
| 50 | $ 2.08 | |||
| 100 | $ 1.82 | |||
| 250 | $ 1.80 | |||
| 500 | $ 1.49 | |||
| 1000 | $ 1.37 | |||
Description
General part information
BSC0402 Series
OptiMOS™ PD power MOSFETis Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products with best-in-class performance for differentiated designs in compact, lightweight packages.
Documents
Technical documentation and resources