SB580E-G

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Comchip Technology

DIODE SCHOTTKY 80V 5A DO201AD

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Comchip Technology

DIODE SCHOTTKY 80V 5A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SB580E-G

Capacitance @ Vr, F	500 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If	850 mV

DIODE SCHOTTKY 80V 5A DO201AD

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Speed	Mounting Type	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Technology
Comchip Technology SB580E-G	DO-201AD, Axial	80 V	150 °C	-65 C	DO-201AD	5 A	200 mA, 500 ns	Through Hole	500 pF	850 mV	500 µA	Schottky

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General part information

Diode 80 V 5A Through Hole DO-201AD

Technical documentation and resources