1N2129AR

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GeneSiC Semiconductor

DIODE GEN PURP REV 100V 60A DO5

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GeneSiC Semiconductor

DIODE GEN PURP REV 100V 60A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N2129AR

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP REV 100V 60A DO5

Part	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case
GeneSiC Semiconductor 1N2129AR	Reverse Polarity, Standard	200 C	-65 C	100 V	Standard Recovery >500ns	200 mA	60 A	1.1 V	DO-5	10 µA	Chassis, Stud Mount	DO-203AB, DO-5, Stud

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General part information

Diode 100 V 60A Chassis, Stud Mount DO-5

Technical documentation and resources