IPD95R2K0P7ATMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; DPAK TO-252 PACKAGE; 2000 MOHM; PRICE/PERFORMANCE

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IPD95R2K0P7ATMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; DPAK TO-252 PACKAGE; 2000 MOHM; PRICE/PERFORMANCE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD95R2K0P7ATMA1

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	330 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	37 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPD95R2 Series

Part	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Technology	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Infineon Technologies IPD95R2K0P7ATMA1	37 W	10 V	330 pF	4 A	N-Channel	3.5 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	PG-TO252-3	950 V	2 Ohm	20 V	-55 °C	150 °C	10 nC	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.71
		10	$ 1.09
		100	$ 0.73
		500	$ 0.58
		1000	$ 0.53
	Digi-Reel®	1	$ 1.71
		10	$ 1.09
		100	$ 0.73
		500	$ 0.58
		1000	$ 0.53
	Tape & Reel (TR)	2500	$ 0.47
		5000	$ 0.44
		7500	$ 0.44
Newark	Each (Supplied on Cut Tape)	1	$ 1.73
		10	$ 1.22
		25	$ 1.13
		50	$ 1.04
		100	$ 0.94

Description

General part information

IPD95R2 Series

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest950 V CoolMOS™ P7technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th)of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.

Documents

Technical documentation and resources