
IKFW75N65EH5XKSA1
ActiveTHE IKFW75N65EH5 IS A 650 V, 75 A IGBT WITH ANTI-PARALLEL DIODE IN TO-247 ADVANCED ISOLATION PACKAGE
Deep-Dive with AI
Search across all available documentation for this part.

IKFW75N65EH5XKSA1
ActiveTHE IKFW75N65EH5 IS A 650 V, 75 A IGBT WITH ANTI-PARALLEL DIODE IN TO-247 ADVANCED ISOLATION PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IKFW75N65EH5XKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 240 A |
| Gate Charge | 144 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 148 W |
| Reverse Recovery Time (trr) | 75 ns |
| Switching Energy | 1.8 mJ, 600 µJ |
| Td (on/off) @ 25°C | 206 ns, 30 ns |
| Test Condition [custom] | 400 V, 15 V |
| Test Condition [custom] | 60 A |
| Test Condition [custom] | 12 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IKFW75 Series
Hard-switching 650 V, 75 ATRENCHSTOP™ 5 H5IGBT discrete in TO-247advanced isolationpackage is the highest efficiency discrete IGBT technology on the market ideally suited for customers who are looking for outstanding efficiency and power density. This package eliminates the need of isolation material and enables high power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.
Documents
Technical documentation and resources