ZX5T951GTA

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 5.5A I(C), 60V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN, SOT-223, 4 PIN

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 5.5A I(C), 60V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN, SOT-223, 4 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	ZX5T951GTA

Current - Collector (Ic) (Max) [Max]	5.5 A
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	120 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	3 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

PNP, 60V, 5.5A, SOT223

Part	Power - Max [Max]	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc ZX5T951GTA	3 W	PNP	SOT-223-3	5.5 A	Surface Mount	20 nA	TO-261-4 TO-261AA	250 mV	100	60 V	120 MHz	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 60V, 5.5A, SOT223

Technical documentation and resources