IPN60R3K4CEATMA1

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Infineon Technologies

POWER MOSFET, N CHANNEL, 600 V, 2.6 A, 3.06 OHM, SOT-223, SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 600 V, 2.6 A, 3.06 OHM, SOT-223, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IPN60R3K4CEATMA1

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	93 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	5 W
Rds On (Max) @ Id, Vgs	3.4 Ohm
Supplier Device Package	PG-SOT223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)
Infineon Technologies IPN60R3K4CEATMA1	TO-261-4 TO-261AA	3.4 Ohm	4.6 nC	Surface Mount	2.6 A	20 V	N-Channel	PG-SOT223-3	MOSFET (Metal Oxide)	93 pF	10 V	5 W	3.5 V	150 °C	-40 °C	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 2.6A (Tc) 5W (Tc) Surface Mount PG-SOT223-3

Technical documentation and resources